Name: Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering) (en Inglés)
Price: 514852.00 COP
Availability: InStock
Author: Wang, Fei ; Zhang, Zheyu ; Jones, Edward A.
ISBN: 9781785614910

portada Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering) (en Inglés)

Formato

Libro Físico

Autor

Fei Wang

Zheyu Zhang

Edward A. Jones

Editorial

Institution of Engineering & Technology

Año

2018

Idioma

Inglés

N° páginas

347

Encuadernación

Tapa Dura

Dimensiones

23.9 x 16.3 x 2.3 cm

Peso

0.68 kg.

ISBN13

9781785614910

Categorías

Dispositivos y materiales electrónicos

Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering) (en Inglés)

Fei Wang (Autor) · Zheyu Zhang (Autor) · Edward A. Jones (Autor) · Institution of Engineering & Technology · Tapa Dura

Libro Físico

$ 514.852

$ 936.095

Ahorras: $ 421.243

45% descuento

Envío normal

Origen: Estados Unidos (Costos de importación incluídos en el precio)

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Reseña del libro "Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering) (en Inglés)"

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.