Name: New Frontiers in Surface and Interface Science and Technology: Handbook of Molecular Beam Epitaxy of Oxide Materials: (in 3 Volumes): Volume 1: Volume 3: Seminal Contributions to Oxide mbe (en Inglés)
Price: 4291786.00 COP
Availability: InStock
Author: Charles Ahn; Scott Chambers; Alexander A Demkov; John Ekerdt; Bharat Jalan; Lior Kornblum; Joseph Ngai; Agham Posadas; Fred Walker
ISBN: 9789819809677

portada New Frontiers in Surface and Interface Science and Technology: Handbook of Molecular Beam Epitaxy of Oxide Materials: (in 3 Volumes): Volume 1: Volume 3: Seminal Contributions to Oxide mbe (en Inglés)

New Frontiers in Surface and Interface Science and Technology: Handbook of Molecular Beam Epitaxy of Oxide Materials: (in 3 Volumes): Volume 1: Volume 3: Seminal Contributions to Oxide mbe (en Inglés)

Formato

Libro Físico

Editorial

World Scientific Publishing Company

Autor

Charles Ahn; Scott Chambers; Alexander A Demkov; John Ekerdt; Bharat Jalan; Lior Kornblum; Joseph Ngai; Agham Posadas; Fred Walker

Idioma

Inglés

N° páginas

750

Encuadernación

Tapa Dura

ISBN13

9789819809677

New Frontiers in Surface and Interface Science and Technology: Handbook of Molecular Beam Epitaxy of Oxide Materials: (in 3 Volumes): Volume 1: Volume 3: Seminal Contributions to Oxide mbe (en Inglés)

Charles Ahn; Scott Chambers; Alexander A Demkov; John Ekerdt; Bharat Jalan; Lior Kornblum; Joseph Ngai; Agham Posadas; Fred Walker (Autor) · World Scientific Publishing Company · Tapa Dura

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Reseña del libro "New Frontiers in Surface and Interface Science and Technology: Handbook of Molecular Beam Epitaxy of Oxide Materials: (in 3 Volumes): Volume 1: Volume 3: Seminal Contributions to Oxide mbe (en Inglés)"

This set of books provide a detailed introduction to molecular beam epitaxy (MBE) of Oxides and modern characterization techniques used to analyze thin oxide films. A reprint volume containing seminal papers in the field allows the reader to experience the excitement of discovery first hand in the voices of people who made those discoveries. MBE revolutionized the semiconductor technology, but its introduction to oxide growth has been delayed, owing to a complex set of reasons that range from practical difficulties (chemically aggressive environment and high temperature) to fundamental differences from semiconductors (reactive growth). It aims to be a useful reference to an expert as well as a guide to a graduate student.