Name: transistor scaling: volume 913: methods, materials and modeling (en Inglés)
Price: 184364.00 COP
Availability: InStock
Author: Thompson, Scott ; Nouri, Faran ; Lee, Wen-Chin
ISBN: 9781558998698

portada transistor scaling: volume 913: methods, materials and modeling (en Inglés)

transistor scaling: volume 913: methods, materials and modeling (en Inglés)

Formato

Libro Físico

Ilustrado por

Scott Thompson

Faran Nouri

Wen-Chin Lee

Editorial

Cambridge University Press

Autor

Thompson, Scott ; Nouri, Faran ; Lee, Wen-Chin

Año

2006

Idioma

Inglés

N° páginas

205

Encuadernación

Tapa Dura

Dimensiones

23.4 x 15.5 x 1.8 cm

Peso

0.43 kg.

ISBN

1558998691

ISBN13

9781558998698

Categorías

Ciencia de materiales
Dispositivos y materiales electrónicos

transistor scaling: volume 913: methods, materials and modeling (en Inglés)

Scott Thompson (Ilustrado por) · Faran Nouri (Ilustrado por) · Wen-Chin Lee (Ilustrado por) · Cambridge University Press · Tapa Dura

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Reseña del libro "transistor scaling: volume 913: methods, materials and modeling (en Inglés)"

For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density - Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured