Name: Advances in Gan, Gaas, sic and Related Alloys on Silicon Substrates: Volume 1068 (Mrs Proceedings) (en Inglés)
Price: 154298.00 COP
Availability: InStock
Author: Li, Tingkai ; Redwing, Joan M. ; Mastro, Michael
ISBN: 9781107408562

portada Advances in Gan, Gaas, sic and Related Alloys on Silicon Substrates: Volume 1068 (Mrs Proceedings) (en Inglés)

Advances in Gan, Gaas, sic and Related Alloys on Silicon Substrates: Volume 1068 (Mrs Proceedings) (en Inglés)

Formato

Libro Físico

Ilustrado por

Tingkai Li

Joan M. Redwing

Michael Mastro

Editorial

Cambridge University Press

Autor

Li, Tingkai ; Redwing, Joan M. ; Mastro, Michael

Año

2014

Idioma

Inglés

N° páginas

312

Encuadernación

Tapa Blanda

Dimensiones

22.9 x 15.2 x 1.7 cm

Peso

0.42 kg.

ISBN13

9781107408562

N° edición

Categorías

Ciencia de materiales

Advances in Gan, Gaas, sic and Related Alloys on Silicon Substrates: Volume 1068 (Mrs Proceedings) (en Inglés)

Tingkai Li (Ilustrado por) · Joan M. Redwing (Ilustrado por) · Michael Mastro (Ilustrado por) · Cambridge University Press · Tapa Blanda

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Reseña del libro "Advances in Gan, Gaas, sic and Related Alloys on Silicon Substrates: Volume 1068 (Mrs Proceedings) (en Inglés)"

To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.