Name: Lattice-mismatched Epitaxy for Fabricating HgCdTe Infrared Materials and Detectors: HgCdTe infrared materials and detectors (en Inglés)
SKU: 65999212
Price: 155307.00 COP
Availability: InStock
Author: Lei, Wen
ISBN: 9780750334440

portada Lattice-mismatched Epitaxy for Fabricating HgCdTe Infrared Materials and Detectors: HgCdTe infrared materials and detectors (en Inglés)

Lattice-mismatched Epitaxy for Fabricating HgCdTe Infrared Materials and Detectors: HgCdTe infrared materials and detectors (en Inglés)

Formato

Libro Físico

Editorial

Institute of Physics Publishing

Autor

Lei, Wen

Idioma

Inglés

N° páginas

160

Encuadernación

Tapa Blanda

Dimensiones

25.4x17.8x0.9 cm

ISBN13

9780750334440

Lattice-mismatched Epitaxy for Fabricating HgCdTe Infrared Materials and Detectors: HgCdTe infrared materials and detectors (en Inglés)

Lei, Wen (Autor) · Institute of Physics Publishing · Tapa Blanda

Libro Nuevo Importado

Envío: 20 a 24 días háb.

$ 258.846$ 155.307

-40%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan más de 100 unidades

$ 155.307

¡Envío Gratis! Llega entre el 03 Dic y el 11 Dic a Bogota, Cundinamarca. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Lattice-mismatched Epitaxy for Fabricating HgCdTe Infrared Materials and Detectors: HgCdTe infrared materials and detectors (en Inglés)"

Applying HgCdTe infrared material as a key example, this book delves into the theoretical knowledge and experimental techniques necessary to achieve high quality semiconductor lattice-mismatched heteroepitaxy for applications in high performance electronic and optoelectronic devices. The concepts and techniques introduced in this book can be extended to other semiconductor material systems and devices, and thus, it serves as an essential reference book for engineers, researchers and academics working in the general area of semiconductor epitaxy and related device applications. By guiding the development of superior heteroepitaxial materials, it supports the creation of next-generation electronic and optoelectronic devices with expanded performance and functionality.Key Features: Author is a leading researcher in area of HgCdTe infrared materials and detectors Review of state of the art in third gen infrared materials and detectors Techniques applicable to epitaxial growth techniques for other semiconductor materials