Name: The Principles and Uses of Nanophotonic (en Inglés)
SKU: 66406702
Price: 220419.00 COP
Availability: InStock
Author: Singha Roy, Subhamoy
ISBN: 9786209389832

portada The Principles and Uses of Nanophotonic (en Inglés)

The Principles and Uses of Nanophotonic (en Inglés)

Formato

Libro Físico

Editorial

LAP Lambert Academic Publishing

Autor

Singha Roy, Subhamoy

Idioma

Inglés

N° páginas

Encuadernación

Tapa Blanda

Dimensiones

22.9x15.2x0.6 cm

ISBN13

9786209389832

The Principles and Uses of Nanophotonic (en Inglés)

Singha Roy, Subhamoy (Autor) · LAP Lambert Academic Publishing · Tapa Blanda

Libro Nuevo Importado

Envío: 20 a 24 días háb.

$ 440.839$ 220.419

-50%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan 10 unidades

$ 220.419

¡Envío Gratis! Llega entre el 14 Dic y el 21 Dic a Bogota, Cundinamarca. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "The Principles and Uses of Nanophotonic (en Inglés)"

The Principles and Uses of Nanophotonic: QWs, QWWs, and QDs of non-linear optoelectronic nanostructured materials and their exterior photoelectric consequence: Using a recently developed electron dispersion law that takes into account the anisotropies of the spin-orbiting constants, effective mass electrons, and control of crystal field splitting within the framework of k.p formalism, the external photoelectric effect from quantum wells, quantum well wires, and quantum dots of non-linear optical and optoelectronic nanostructured materials. Additionally, the external photoelectric effect has been computed for II-VI and quantum confined optoelectronic stressed materials (such as QWs, QWWs, and QWs).By means of quantum confined Hg1-xCdxTe, CdGaAs2 and In1-xGaxAsyP1-y lattice matched to CdS, InP, and stressed InSb as examples, it has been discovered that the external photoelectric effect shows plateaus as a function of incident photon energy, which is crucial from an experimental perspective. Our generalized approach is specialized to the numerical findings of quantum restricted optoelectronic III-V degenerate semiconductors.